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| PD- 91871 IRLC1304 HEXFET(R) Power MOSFET Die in Wafer Form D G S 40 V Size 4.6 Rds(on)=0.020 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Operating Junction and Storage Temperature Range Guaranteed (Min/Max) 40V Min. 0.020 Max. 0.030 Max. 1.0V Min., 3.0V Max. 25A Max. 15A Max. 175C Max. Test Conditions VGS = 0V, ID = 250A VGS = 10V, ID = 5.0A VGS = 4.5V, I D = 5.0A VDS = VGS, ID = 250A VDS = 55V, VGS = 0V, TJ = 25C VGS = 16V Mechanical Data Nominal Backmetal Composition, Thickness: Nominal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Recommended Storage Environment: Recommended Die Attach Conditions Reference Standard IR packaged part ( for design ) : IRLBL1304 Cr-NiV-Ag ( 1kA-2kA-2.5kA ) 99% Al, 1% Si (0.004 mm) 0.181" x 0.303" ( 4.6mm x 7.7 mm) 150mm, with std. < 100 > flat .014" + / -.003" 01-5298 0.1 mm 0.13mm Diameter Minimum, 0.51mm Max. Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Die Outline 3/23/99 |
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